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대체 부품

InfineonIRFZ44NPBF

InfineonAUIRFZ44N

Price @ 1000

$ 0.442

$ 0.93

Stock

1,428,718

100,750

Authorized Distributors

Mount

Through Hole

Surface Mount, Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

49 A

Threshold Voltage

2.1 V

2 V

Rds On Max

17.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

83 W

94 W

Input Capacitance

1.47 nF

공급망

Country of OriginMainland China, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-10-31

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

설명

유통업체에서 제공한 Infineon IRFZ44NPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg

RS (Formerly Allied Electronics)

Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

Avnet

Transistor MOSFET N-Ch. 41A/55V TO220 IRFZ 44 NPBF

Rapid Electronics

Trans MOSFET N-CH 55V 49A 3-Pin (3+Tab) TO-220AB T/R

Verical

55V 49A 94W 17.5m´Î@10V25A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:49A; Current Temperature:25°C; Device Marking:IRFZ44NPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V

element14 APAC