Infineon IRFU3410PBF

Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

3W(Ta)，110W(Tc) 20V 4V@ 250µA 56nC@ 10 V 1individualNChannel 100V 39mΩ@ 18A,10V 31A 1.69nF@25V IPAK，TO-251AA Through hole mounting 6.73mm*2.38mm*6.22mm

MOSFET, N, 100V, 31A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:31A; Resistance, Rds On:0.039ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 100V, 31A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:39ohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; Termination Type:Through Hole; Turn Off Time:13ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V