가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFSL4127PBF | 250 | 250 | |||||||||
| RS (Formerly Allied Electronics) | IRFSL4127PBF | 0 | 200 | Bulk | 9h | |||||||
| Microchip USA | IRFSL4127PBF | 366 | 600 | Tube | 7d | |||||||
| Verical | IRFSL4127PBF | 254 | 254 | |||||||||
| Win Source | WS-IRFSL4127PBF | 1,400 | 25 | 8h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Infineon IRFSL4127PBF에 대한 설명입니다.
200V Single N-Channel HEXFET Power MOSFET Switch in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:72A; On Resistance, Rds(on):18.6mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:4-TO-262 ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)72 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max22 mΩ
Resistance22 MΩ
Rise Time18 ns
Schedule B8541290080
Turn-Off Delay Time56 ns
Turn-On Delay Time17 ns
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책