공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-10-06
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRFSL3206PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
InfineonIRFSL3107PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
설명
유통업체에서 제공한 Infineon IRFSL3006PBF에 대한 설명입니다.
Single N-Channel 60 V 2.5 mOhm 200 nC HEXFET® Power Mosfet - TO-262-3
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
375W(Tc) 20V 4V@ 250µA 300nC@ 10 V 1individualNChannel 60V 2.5mΩ@ 170A,10V 195A 8.97nF@50V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:270A; On Resistance, Rds(on):2.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time189 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time182 ns
Schedule B8541290080
Turn-Off Delay Time118 ns
Turn-On Delay Time16 ns
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책