대체 부품
Price @ 1000
$ 6.97
$ 1.022
Stock
28,963
230,591
Authorized Distributors
2
5
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
61 A
61 A
Threshold Voltage
3 V
2 V
Rds On Max
13.9 mΩ
13.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
3.18 nF
3.18 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIPB70N10S3L12ATMA1
100V, N-Ch, 11.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
onsemiHUF75645S3S
75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs | MOSFET N-CH 100V 75A D2PAK
InfineonAUIRF3710ZS
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
설명
유통업체에서 제공한 Infineon IRFS4510PBF에 대한 설명입니다.
Single N-Channel 100 V 13.9 mOhm 58 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 61A 3-Pin(2+Tab) D2PAK Tube
Transistor MOSFET N-ch 100V 43A D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET Operating temperature: -55...+175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 143 W
MOSFET N CH 100V, 61A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)61 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13.9 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.18 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max13.9 mΩ
Rise Time32 ns
Threshold Voltage3 V
Turn-Off Delay Time28 ns
Turn-On Delay Time13 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm