대체 부품
Price @ 1000
$ 2.36
$ 8.46
Stock
304,502
97,263
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vds)
75 V
75 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
-
2.35 V
Rds On Max
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
370 W
370 W
Input Capacitance
9.37 nF
9.37 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
관련 부품
InfineonIRFS3107PBF
N-Ch MOSFET 75V 195A 3mΩ@140A,10V 240nC@10V 9.37nF@50V D2PAK SMD 6.5mm × 6.22mm × 2.3mm
설명
유통업체에서 제공한 Infineon IRFS3107TRLPBF에 대한 설명입니다.
N CH POWER MOSFET, HEXFET, 75V, 230A, D2PAK; Transistor Polarity:N Channel; Cont
Single N-Channel 75 V 3 mOhm 240 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, 75V, 230A, 3 MOHM, 160 NC QG, D2PAK | Infineon IRFS3107TRLPBF
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 75V, 195A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vds)75 V
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.37 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity800
Power Dissipation370 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time110 ns
Schedule B8541290080
Turn-Off Delay Time99 ns
Turn-On Delay Time19 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책