대체 부품
Price @ 1000
$ 0.69
$ 2.05
Stock
2,141,534
1,248,690
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
33 A
33 A
Threshold Voltage
5 V
5 V
Rds On Max
42 mΩ
42 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
144 W
144 W
Input Capacitance
1.75 nF
1.75 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
InfineonIRFR4615PBF
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
InfineonAUIRFR4615
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
설명
유통업체에서 제공한 Infineon IRFR4615TRLPBF에 대한 설명입니다.
Single N-Channel 150V 42 mOhm 26 nC HEXFET® Power Mosfet - TO-252-3
Power MOSFET, N Channel, 150 V, 33 A, 0.034 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 33A DPAK
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL POWER MOSFET, HEXFET, 150V, 33; N CHANNEL POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drai; Available until stocks are exhausted Alternatives available
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance42 mΩ
Package Quantity3000
Power Dissipation144 W
Rds On Max42 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time15 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책