대체 부품
Price @ 1000
$ 1.25
$ 0.524
$ 0.524
Stock
247,653
252,107
252,107
Authorized Distributors
2
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
30 A
30 A
30 A
Threshold Voltage
-
2 V
2 V
Rds On Max
24.5 mΩ
24.5 mΩ
24.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
48 W
48 W
48 W
Input Capacitance
740 pF
740 pF
740 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonAUIRFR4105Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonIPD30N06S223ATMA2
Mosfet, N-Ch, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S223ATMA2
InfineonIPD30N06S223ATMA2
Mosfet, N-Ch, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S223ATMA2
STMicroelectronicsSTD36P4LLF6
Power Field-Effect Transistor, 36A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRFR4105ZTRPBF에 대한 설명입니다.
Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 55V 30A DPAK
Single N-Channel 55V 24.5 mOhm 18 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, N-CH, 55V, 30A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.019ohm; ; Available until stocks are exhausted Alternative available
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):24.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 24.5 / Gate-Source Voltage V = 20 / Fall Time ns = 24 / Rise Time ns = 40 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance24.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance24.5 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation48 W
Rds On Max24.5 mΩ
Resistance24.5 MΩ
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)55 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책