가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR4105TRLPBF | 3,129 | 15h | |||||||||
| RS (Formerly Allied Electronics) | IRFR4105TRLPBF | 0 | 3K | Bulk | 4h | |||||||
| Win Source | WS-IRFR4105TRLPBF | 19,250 | 140 | 16h | ||||||||
| Worldway Electronics | IRFR4105TRLPBF | 9,794 | 7 | Tape & Reel | 15h | |||||||
| Microchip USA | IRFR4105TRLPBF | 148 | 100 | 9h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIRLR2705TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
InfineonIRLR2705PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
InfineonIRLR2705TRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
onsemiHUFA76419D3S
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | MOSFET N-CH 60V 20A DPAK
Diodes Inc.DMN6040SK3-13
N-Channel 60 V 40 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3
설명
유통업체에서 제공한 Infineon IRFR4105TRLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;D-Pak (TO-252AA);PD 68W
Single N-Channel 55V 0.045 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:27A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3000
Power Dissipation48 W
Rds On Max45 mΩ
Rise Time49 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time7 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책