대체 부품
Price @ 1000
$ 0.48
$ 0.48
Stock
237,597
173,084
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vds)
20 V
20 V
Continuous Drain Current (ID)
30 A
30 A
Threshold Voltage
-
-
Rds On Max
6.5 mΩ
6.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
120 W
120 W
Input Capacitance
2.98 nF
2.98 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 9 months ago)
관련 부품
InfineonIRFR3711ZTRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 4.5Milliohms;ID 93A;D-Pak (TO-252AA);PD 79W
InfineonIRLR8256TRPBF
MOSFET N-CH 25V 81A DPAK N-Channel 25 V 81A (Tc) 63W (Tc) Surface Mount TO-252AA (DPAK)
설명
유통업체에서 제공한 Infineon IRFR3711TRLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.2Milliohms;ID 100A;D-Pak (TO-252AA);-55de
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
2.5W(Ta)，120W(Tc) 20V 3V@ 250µA 44nC@ 4.5 V 1individualNChannel 20V 6.5mΩ@ 15A,10V 100A 2.98nF@10V TO-252 SMD mount 6.5mm*6.22mm*2.3mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating110 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vds)20 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.98 nF
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity3000
Power Dissipation120 W
Rds On Max6.5 mΩ
Rise Time220 ns
Turn-Off Delay Time17 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)20 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm