공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-12-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
InfineonIRFR2407PBF
Transistor: N-MOSFET; unipolar; 75V; 42A; 0.026ohm; 110W; -55+175 deg.C; SMD; TO252(DPAK)
InfineonIRLR2905ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 42A;D-Pak (TO-252AA);PD 110W
InfineonIRFR3806PBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12.6 Milliohms;ID 43A;D-Pak;PD 71W;VGS +/-20
onsemiFDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
설명
유통업체에서 제공한 Infineon IRFR2307ZPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 12.8 Milliohms;ID 42A;D-Pak (TO-252AA);-55de
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
- INFINEO
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- INFIN
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- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.19 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance16 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max16 mΩ
Recovery Time47 ns
Resistance16 MΩ
Rise Time65 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time44 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)75 V
Dimensions
Height2.3876 mm
Length6.7056 mm