공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2026-05-31
LTD Date2026-11-30
관련 부품
InfineonIRFP7537PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-247AC package, TO247-3, RoHS
InfineonIRFP2907PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de
설명
유통업체에서 제공한 Infineon IRFP7530PBF에 대한 설명입니다.
Power Field-Effect Transistor, 281A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-247AC package, TO247-3, RoHS
Infineon SCT
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-247-3
Mosfet, N Channel, 60V, 195A, To-247Ac-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:195A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Infineon Technologies IRFP7530PBF
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time104 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.703 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation341 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity400
Power Dissipation341 W
Rds On Max2 mΩ
Rise Time141 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time172 ns
Turn-On Delay Time52 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm