Infineon IRFP3206PBF

IRFP3206PBF N-channel MOSFET Transistor, 200 A, 60 V, 3-Pin TO-247AC

Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 60V 120A TO-247AC

Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC

60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Power MOSFET, N Channel, 60 V, 120 A, 0.0024 ohm, TO-247AC, Through Hole

Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.