공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2025-02-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFP2907PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de
VishayIRFP9140PBF
Power MOSFET, General Purpose, P Channel, 100 V, 21 A, 0.2 ohm, TO-247AC, Through Hole
설명
유통업체에서 제공한 Infineon IRFP4468PBF에 대한 설명입니다.
IRFP4468PBF N-channel MOSFET Transistor, 290 A, 100 V, 3-Pin TO-247AC
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 520 W
Single N-Channel 100 V 2.6 mOhm 540 nC HEXFET® Power Mosfet - TO-247AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 290 A, 0.002 ohm, TO-247AC, Through Hole
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N CHANNEL MOSFET, 100V, 290A, TO-247AC;; N CHANNEL MOSFET, 100V, 290A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:290A; Drain Source ; Available until stocks are exhausted Alternatives available
N Channel Mosfet, 100V, 290A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:290A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Infineon IRFP4468PBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, 100V 290A TO-247AC; Transistor Type:Power MOSFET; Transistor Polarity:N; Typ Voltage Vds:100V; Cont Current Id:290A; On State Resistance:2mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:4V; Case Style:TO-247AC; Termination Type:Through Hole; Operating Temperature Range:-55°C to + 175°C; Max Voltage Vds:100V; Power Dissipation:520W; Pulse Current Idm:1120A; Transistor Case Style:TO-247AC
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time260 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance19.86 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation520 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity400
Power Dissipation520 W
Rds On Max2.6 mΩ
Resistance2.6 MΩ
Rise Time230 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time160 ns
Turn-On Delay Time52 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.3086 mm