공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2013-03-12
LTD Date2013-09-12
관련 부품
InfineonIRFP4332PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W
InfineonIRFP4227PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
InfineonIRFP4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHS
설명
유통업체에서 제공한 Infineon IRFP4232PBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 30Milliohms;ID 60A;TO-247AC;PD 430W;VF 1V
Single N-Channel 250 V 35.7 mOhm 160 nC HEXFET® Power Mosfet - TO-247-3AC
INTERNATIONAL RECTIFIER IRFP4232PBF MOSFET Transistor, N Channel, 60 A, 250 V, 0.03 ohm, 10 V, 5 V
250V Single N-Channel Plasma Display Panel HEXFET Power MOSFET in a TO-247AC package
Power Field-Effect Transistor, 60A I(D), 250V, 0.0357ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:250V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:430W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:TO-247AC; Power Dissipation Pd:430W; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance35.7 mΩ
Drain to Source Voltage (Vds)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.29 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation430 W
Min Breakdown Voltage250 V
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation430 W
Rds On Max35.7 mΩ
Resistance35.7 MΩ
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time64 ns
Turn-On Delay Time37 ns
Voltage Rating (DC)250 V
Dimensions
Height24.99 mm
Length15.87 mm
Width5.3086 mm