Infineon IRFI4410ZPBF

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, FULLPAK220-3, RoHS

Single N Channel 100 V 9.3 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

Power MOSFET, N Channel, 100 V, 43 A, 9.3 Milliohms, TO-220AB, 3 Pins, Through Hole

TUBE / MOSFET, 100V, 65A, 9.3mOhm, 83 nC Qg, TO-220 fullpak

Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-220AB Full-Pak

Power Field-Effect Transistor, 43A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 100V, 43A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0079; Available until stocks are exhausted Alternative available

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 43 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 7.9 / Gate-Source Voltage V = 30 / Fall Time ns = 30 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 47