공급망
Country of OriginAustria, Germany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-18
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
STMicroelectronicsSTF100N10F7
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220FP package
STMicroelectronicsSTF110N10F7
N-channel 100 V, 5.1 mOhm typ., 45 A STripFET F7 Power MOSFET in TO-220FP package
NXP SemiconductorsPSMN8R5-100XSQ
Power Field-Effect Transistor, 49A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIPP50N10S3L16AKSA1
100V, N-Ch, 15.7 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T, PG-TO220-3, RoHS
설명
유통업체에서 제공한 Infineon IPA083N10N5XKSA1에 대한 설명입니다.
Trans MOSFET N-CH 100V 44A Automotive 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 44A I(D), 100V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 100V, 44A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0072Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPA083N10N5XKSA1
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)44 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8.3 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.1 nF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation36 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.3 mΩ
Package Quantity500
Power Dissipation36 W
Rds On Max8.3 mΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time15 ns
Dimensions
Height19.6 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책