가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFH7110TRPBF | 40 | 22h | |||||||||
| RS (Formerly Allied Electronics) | IRFH7110TRPBF | 0 | 10 | Bulk | 15h | |||||||
| Farnell | IRFH7110TRPBF | 0 | 1 | 21h | ||||||||
| Win Source | WS-IRFH7110TRPBF | 2,780 | 45 | 23h | ||||||||
| Worldway Electronics | IRFH7110TRPBF | 15,336 | 7 | Tape & Reel | 22h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRFH5110TRPBF
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFH7107TRPBF
75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH8318TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 Infineon IRFH7110TRPBF에 대한 설명입니다.
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 11A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
MOSFET N CH 100V, 11A, PQFN 5X6; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFI
- INFENION
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- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.24 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max13.5 mΩ
Rise Time23 ns
Threshold Voltage3 V
Turn-Off Delay Time22 ns
Turn-On Delay Time11 ns
Dimensions
Height1.17 mm
Length5.85 mm
Width5 mm