대체 부품
Price @ 1000
$ 18
$ 15.255
$ 15.255
Stock
20,391
17,984
17,984
Authorized Distributors
3
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-39
TO-39
TO-39
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
8 A
8 A
8 A
Threshold Voltage
4 V
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
25 W
25 W
25 W
Input Capacitance
-
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonJANTX2N6849
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
설명
유통업체에서 제공한 Infineon IRFF130에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 100 V 25 W 28.5 nC Hexfet Transistor Through Hole - TO-39
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No
MOSFET, N, TO-39; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:75mJ; Current Id Max:8A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.0024kg
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.4 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance195 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Power Dissipation25 W
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time30 ns
Dimensions
Height4.57 mm
Lead Length14.22 mm