유통업체에서 제공한 Infineon IRFB7546PBF에 대한 설명입니다.
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 60 V 7.3 mOhm 87 nC HEXFET® Power Mosfet - TO-220-3
TUBE / MOSFET, 60V, 75A, 7.3 mOhm, 58nC, TO-220
Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, 60V, 75A, 7.3 MOHM, 58 NC QG, TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
Power Field-Effect Transistor, 75A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 60V, 75A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.