Infineon IRFB3607PBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole

Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.