공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-06-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRFB4115GPBF
150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
설명
유통업체에서 제공한 Infineon IRFB4228PBF에 대한 설명입니다.
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB
MOSFET, 150V, 83A, 15 MOHM, 72 NC QG, TO-220AB
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 330 W
PDP SWITCH Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 150V, 83A, TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Pow
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)83 A
Current Rating-83 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.53 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage150 V
Min Operating Temperature-40 °C
Nominal Vgs30 V
Number of Channels1
Number of Elements1
On-State Resistance15 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max15 mΩ
Recovery Time110 ns
Resistance15 MΩ
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage3 V
Turn-Off Delay Time24 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)-150 V
Dimensions
Height19.8 mm
Length10.6426 mm
Width4.82 mm