Infineon IRFB41N15DPBF

Name: Infineon IRFB41N15DPBF
Brand: Infineon
SKU: IRFB41N15DPBF

Mosfet, Power; N-ch; Vdss 150V; Rds(on) 0.045 Ohm; Id 41A; TO-220AB; Pd 200W; Vgs +/-30V

$ 4.94

Obsolete

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모든 가격 할인 보기

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFB41N15DPBF	0	250	Bulk				4.940	4.280	18h
Farnell		IRFB41N15DPBF	0	1		1.273*	0.953*	0.742*	0.742*	0.742*	1h
Microchip USA		IRFB41N15D	50	600	Tube				1.666	1.666	18h
Win Source	2	WS-IRFB41N15DPBF	4,298	35				1.373	1.116	1.116	3h
Worldway Electronics	2	IRFB41N15DPBF	9,380	7	Tube		1.478	1.433	1.358	1.358	1h

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFB41N15DPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet13 페이지9년 전

Datasheet13 페이지19년 전

Datasheet13 페이지22년 전

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-11-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

설명

유통업체에서 제공한 Infineon IRFB41N15DPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V

RS (Formerly Allied Electronics)

Single N-Channel 150 V 0.045 Ohm 72 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

Distrelec

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon

MOSFET, N, 150V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:41A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:164A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

element14 APAC