공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-03-19
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
InfineonIRFB7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
STMicroelectronicsSTP100N6F7
N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
설명
유통업체에서 제공한 Infineon IRFB3407ZPBF에 대한 설명입니다.
Trans MOSFET N-CH Si 75V 122A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 75V 120A TO-220
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
IRFB Series 75V 120A 230W 6.4mOhm TH Single N-Channel MOSFET TO-220-3
MOSFET, 75V, 120A, 3.4 mOhm, 79 nC Qg, TO-220, TUBE
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
MOSFET, N-CH, 75V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.005ohm; ; Available until stocks are exhausted Alternative available
230W(Tc) 20V 4V@ 150µA 110nC@ 10 V 1individualNChannel 75V 6.4mΩ@ 75A,10V 120A 4.75nF@50V TO-220AB Through hole mounting 10mm*4.4mm*15.65mm
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)75 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6.4 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max6.4 mΩ
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time15 ns
Dimensions
Height20.56 mm