가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF9388TRPBF | 28 | 1 | |||||||||
| Rochester Electronics | IRF9388TRPBF | 138 | 10h | |||||||||
| RS (Formerly Allied Electronics) | IRF9388TRPBF | 0 | 20 | Bulk | 2h | |||||||
| Avnet | IRF9388TRPBF | 0 | 4K | 12h | ||||||||
| Farnell | IRF9388TRPBF | 0 | 5 | Cut Tape | 10h |
공급망
Country of OriginIsrael, Mainland China, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2025-12-31
LTD Date2026-12-31
관련 부품
설명
유통업체에서 제공한 Infineon IRF9388TRPBF에 대한 설명입니다.
Single P-Channel 30 V 11.9 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0085oh; Available until stocks are exhausted Alternative available
Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:2.5W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF9388TRPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance11.9 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.68 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance11.9 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max8.5 mΩ
Rise Time57 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time80 ns
Turn-On Delay Time19 ns
Dimensions
Height1.75 mm
Width3.9878 mm