가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDS6673BZ-F085 | 84,086 | 15h | |||||||||
| Newark | FDS6673BZ_F085 | 0 | 2500 | Tape & Reel | ||||||||
| Win Source | WS-FDS6673BZ-F085 | 20 | 23 | 16h | ||||||||
| ICPartonline | FDS6673BZ_F085 | 14,573 | >1wk | |||||||||
| Worldway Electronics | FDS6673BZ-F085 | 21,836 | 7 | Tape & Reel | 14h |
공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-07-10
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2020-01-24
LTD Date2020-07-24
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
관련 부품
InfineonIRF8113TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF8113PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
설명
유통업체에서 제공한 onsemi FDS6673BZ-F085에 대한 설명입니다.
Trans MOSFET P-CH 30V 14.5A Automotive 8-Pin SOIC T/R
P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)14.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance7.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.7 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation2.5 W
Rds On Max7.8 mΩ
Rise Time16 ns
Turn-Off Delay Time225 ns
Turn-On Delay Time14 ns