가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF9383MTRPBF | 2,103 | 1 | |||||||||
| Rochester Electronics | IRF9383MTRPBF | 14,690 | 10h | |||||||||
| Avnet | IRF9383MTRPBF | 0 | 4800 | 1d | ||||||||
| Farnell | IRF9383MTRPBF | 4,532 | 1 | Cut Tape | 9h | |||||||
| Mouser | 942-IRF9383MTRPBF | 128 | 1 | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-16
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
관련 부품
InfineonIRF8302MTRPBF
Mosfet, N-Ch, 30V, 190A, 150Deg C, 104W Rohs Compliant: Yes |Infineon IRF8302MTRPBF
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
VishaySIRA04DP-T1-GE3
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
VishaySIRA06DP-T1-GE3
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
설명
유통업체에서 제공한 Infineon IRF9383MTRPBF에 대한 설명입니다.
T&R / MOSFET, P-CHANNEL, -30V, -160A, 2.9 mOhm, -4.5V capable, DirectFET M-Can
Single P-Channel 30 V 2.9 mOhm 130 nC HEXFET® Power Mosfet - DirectFET®
A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, P-CH, -160V, -22A, DIRECTFET MX; Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance2.9 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.305 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation113 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance2.9 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max2.9 mΩ
Rise Time160 ns
Schedule B8541290080
Turn-Off Delay Time115 ns
Turn-On Delay Time29 ns
Dimensions
Height700 µm