대체 부품
Price @ 1000
$ 0.73
Stock
57,296
1,347,567
Authorized Distributors
1
2
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
15 A
15 A
Threshold Voltage
-1.8 V
-1.8 V
Rds On Max
7.2 mΩ
7.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
2.59 nF
2.59 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-11
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
InfineonIRF8113TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF8113PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
설명
유통업체에서 제공한 Infineon IRF9321PBF에 대한 설명입니다.
P-Channel 30 V -15A 7.2 mOhm 2.5 W SMT Hexfet Power MosFet - SOIC-8
MOSFET P-CH 30V 15A 8SO / P-Channel 30 V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO
Trans MOSFET P-CH 30V 15A 8-Pin SOIC N Tube
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET,P CH,30V,15A,SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-15A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance7.2 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time145 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.59 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
On-State Resistance7.2 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max7.2 mΩ
Recovery Time57 ns
Rise Time79 ns
Threshold Voltage-1.8 V
Turn-Off Delay Time185 ns
Turn-On Delay Time21 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책