가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF8010STRLPBF | 21,600 | 800 | 2d | ||||||||
| Future Electronics | IRF8010STRLPBF | 800 | 800 | Tape & Reel | ||||||||
| Rutronik | TMOSP12022 | 800 | 800 | 7h | ||||||||
| Rochester Electronics | IRF8010STRLPBF | 640 | 23h | |||||||||
| Arrow Electronics | IRF8010STRLPBF | 470 | 1 |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-21
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIRF8010SPBF
Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
InfineonIRF2807SPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;D2Pak;PD 230W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF8010STRLPBF에 대한 설명입니다.
Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 80A D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, 100V, 80A, 15 MOHM, 81 NC QG, D2-PAK | Infineon IRF8010STRLPBF
SMPS MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:260W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF8010STRLPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 15 / Gate-Source Voltage V = 20 / Fall Time ns = 120 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 61 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 260
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.83 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation260 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance15 mΩ
Package Quantity800
PackagingCut Tape
Power Dissipation260 W
Rds On Max15 mΩ
Resistance15 MΩ
Rise Time130 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time61 ns
Turn-On Delay Time15 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책