공급망
Country of OriginMainland China, Thailand, USA
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2012-07-27
LTD Date2013-01-27
관련 부품
InfineonIRF7503TRPBF
Trans Mosfet Array Dual N-Ch 30V 2.4A 8-Pin Micro T/R - Tape And Reel Irf7503Trpbf)
InfineonIRF7506TRPBF
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual P-Channel MOSFET
InfineonIRF7606TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.075Ohm;ID -3.6A;Micro8;PD 1.8W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF7509TRPBF에 대한 설명입니다.
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.11ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2A; Current Id Max:2.7A; On State Resistance @ Vgs = 10V N Channel:900mohm; On State Resistance @ Vgs = 10V P Channel:170mohm; On State Resistance @ Vgs = 4.5V N Channel:140mohm; On State Resistance @ Vgs = 4.5V P Channel:300mohm; Package / Case:Micro8; Power Dissipation Pd:1.25W; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V; Voltage Vgs Rds on Measurement:10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 240 / Power Dissipation (Pd) W = 1.25
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageMSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.7 A
Current Rating2.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time9.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance200 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max110 mΩ
Resistance200 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time19 ns
Dimensions
Height1.11 mm
Length3.048 mm
Width3.048 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책