공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
InfineonIRF7509TRPBF
Infineon Technologies N/P-channel dual HEXFET power MOSFET, 30 V, 2.7 A, TSSOP-8, IRF7509TRPBF
InfineonIRF7506TRPBF
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual P-Channel MOSFET
설명
유통업체에서 제공한 Infineon IRF7503TRPBF에 대한 설명입니다.
Dual N-Channel 30 V 0.222 Ohm 12 nC HEXFET® Power Mosfet - MICRO-8
30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
DUAL N CHANNEL MOSFET, 30V, MICRO8; Tran; DUAL N CHANNEL MOSFET, 30V, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:2.4A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.135ohm; Rds(on) Test Voltage Vgs:10V
Dual N Channel Mosfet, 30V, Micro8, Full Reel; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:2.4A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7503TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 2.4 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 135 / Gate-Source Voltage V = 20 / Fall Time ns = 5.3 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25
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- Infineon Technologies
- INF
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- INFIN
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- INFI
- INFENION
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
- NFINEON
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기술 사양
Physical
Case/PackageMSOP
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.4 A
Current Rating2.4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance135 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time5.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation390 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements2
On-State Resistance135 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max135 mΩ
Resistance135 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time12 ns
Turn-On Delay Time4.7 ns
Voltage Rating (DC)30 V
Dimensions
Height860 µm
Length3 mm
Width3 mm