Infineon IRF7470PBF

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 9 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-12V

Transistor MOSFET N Channel 40 Volt 10.6 Amp 8 Pin SOIC

Single N-Channel 40 V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET N, LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipatio

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:85A; Row Pitch:6.3mm; SMD Marking:F7470; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:10V