공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-04-18
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRF7470TRPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 9 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-12V
InfineonIRF7467PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.4 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-12V
InfineonIRF7468PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 11.7 Milliohms;ID 9.4A;SO-8;PD 2.5W;VGS +/-1
설명
유통업체에서 제공한 Infineon IRF7470PBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 9 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-12V
Transistor MOSFET N Channel 40 Volt 10.6 Amp 8 Pin SOIC
Single N-Channel 40 V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8
SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET N, LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipatio
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:85A; Row Pitch:6.3mm; SMD Marking:F7470; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Current Rating11 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.43 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance13 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max13 mΩ
Recovery Time110 ns
Rise Time1.9 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)40 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책