Infineon IRF7468PBF

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 11.7 Milliohms;ID 9.4A;SO-8;PD 2.5W;VGS +/-1

Single N-Channel 40 V 15.5 mOhm 34 nC HEXFET® Power Mosfet - SOIC-8

MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N Variants: Enhancement mode Power dissipation: 2.5 W

Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:40V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.4A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:75A; Row Pitch:6.3mm; SMD Marking:IRF7468PBF; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V