공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
InfineonIRF7458TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.3Milliohms;ID 14A;SO-8;PD 2.5W;VGS +/-30V
InfineonIRF7805ZTRPBF
MOSFET, Power;P-Ch;VDSS 30V;RDS(ON) 5.5Milliohms;ID 16A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF8113GPBF
N CH POWER MOSFET, HEXFET, 30V, 17.2A, SOIC-8; Transistor Polarity:N Channel; Co
설명
유통업체에서 제공한 Infineon IRF7458PBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.3Milliohms;ID 14A;SO-8;PD 2.5W;VGS +/-30V
MOSFET N-CH 30V 14A 8SO / N-Channel 30 V 14A (Ta) 2.5W (Ta) Surface Mount 8-SO
Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:16V; Voltage, Vgs th Typ:4V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:110A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; SMD Marking:F7458; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V; Width, External:4.05mm
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.41 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance9 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max8 mΩ
Recovery Time77 ns
Rise Time4.6 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책