Infineon IRF7452PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.06Ohm;ID 4.5A;SO-8;PD 2.5W;VGS +/-30V;-55

Single N-Channel 100 V 0.06 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8

Trans MOSFET N-CH 100V 4.5A 8-Pin SOIC

100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:36A; SMD Marking:F7452; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V