가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7380TRPBF | 8,000 | 4K | 1d | ||||||||
| Newark | IRF7380TRPBF | 4,797 | 5 | Cut Tape | ||||||||
| Future Electronics | IRF7380TRPBF | 96,000 | 4K | Tape & Reel | ||||||||
| Arrow Electronics | IRF7380TRPBF | 5,035 | 1 | |||||||||
| DigiKey | IRF7380TRPBFCT-ND | 8,032 | 1 | Cut Tape |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-10
Lifecycle StatusProduction (Last Updated: 5 months ago)
설명
유통업체에서 제공한 Infineon IRF7380TRPBF에 대한 설명입니다.
Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC T/R
Avnet Japan
HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL N-CH , 80V, 3.6A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.061ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
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- Infineon Technologies
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance73 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels2
Number of Elements2
On-State Resistance73 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max73 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time41 ns
Turn-On Delay Time9 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm