공급망
Country of OriginMainland China, Philippines, Usa
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
VishaySI9926CDY-T1-GE3
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
설명
유통업체에서 제공한 Infineon IRF7404TRPBF에 대한 설명입니다.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.04Ohm;ID -6.7A;SO-8;PD 2.5W;VGS +/-12V
Single P-Channel 20 V 0.06 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
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기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.3 A
Current Rating-6.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time32 ns
Schedule B8541290080
Threshold Voltage-700 mV
Turn-Off Delay Time100 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm