MOSFET, DUAL, NP, SMD, SO-8; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:4.5A; Current Id Max:4.5A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):55mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V
This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.