공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-24
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
관련 부품
InfineonIRF7910TRPBF
MOSFET, Power;Dual N-Ch;VDSS 12V;RDS(ON) 11.5 Milliohms;ID 10A;SO-8;PD 2W;-55deg
설명
유통업체에서 제공한 Infineon IRF7329TRPBF에 대한 설명입니다.
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
Dual P-Channel 12V 17 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 12V 9.2A 8-Pin SOIC T/R
Trans MOSFET P-CH 12V 9.2A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:9.2A; On Resistance, Rds(on):21mohm; Rds(on) Test Voltage, Vgs:8V; Drain Source On Resistance @ 10V:21mohm RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9.2 A
Current Rating-9.2 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)-12 V
Element ConfigurationDual
Fall Time260 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance3.45 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max17 mΩ
Rise Time8.6 ns
Schedule B8541290080
Turn-Off Delay Time340 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-12 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm