가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7907TRPBF | 4,000 | 4K | 16h | ||||||||
| Newark | IRF7907TRPBF | 9,364 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF7907TRPBF | 6,457 | 1 | |||||||||
| DigiKey | IRF7907TRPBFCT-ND | 52,971 | 1 | Cut Tape | ||||||||
| Future Electronics | IRF7907TRPBF | 0 | 4K | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF7807ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-20V
STMicroelectronicsSTS8DNF3LL
Dual N-channel 30 V, 0.017 Ohm typ., 8 A STripFET(TM) II Power MOSFET in a SO-8 package
설명
유통업체에서 제공한 Infineon IRF7907TRPBF에 대한 설명입니다.
Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R
Avnet Japan
Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
Infineon SCT
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance11.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance850 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance11.8 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max16.4 mΩ
Schedule B8541290080
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm