가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF7314TRPBF | 2 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRF7314TRPBF | 0 | 20 | Bulk | 15h | |||||||
| Farnell | IRF7314TRPBF | 0 | 5 | Cut Tape | 8h | |||||||
| Component Stockers USA | IRF7314TRPBF | 22,000 | 1d | |||||||||
| Weyland Electronics Group Pte. Ltd. | IRF7314TRPBF | 2,570 | 1 | Tape & Reel | 13m |
대체 부품
Price @ 1000
$ 0.521
$ 0.66
Stock
2,584,926
50,142
Authorized Distributors
3
1
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
5.3 A
5.2 A
Threshold Voltage
-700 mV
-
Rds On Max
58 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
2 W
2.4 W
Input Capacitance
780 pF
913 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-07-31
LTD Date2025-01-31
설명
유통업체에서 제공한 Infineon IRF7314TRPBF에 대한 설명입니다.
MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.058Ohm;ID -5.3A;SO-8;PD 2W;VGS +/-12
Dual P-Channel 20V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC N T/R / MOSFET 2P-CH 20V 5.3A 8-SOIC
Inductor RF Chip Wirewound 75nH 5% 100MHz 20Q-Factor 135mA 2.1Ohm DCR 0402 Paper T/R
Transistor MOSFET 2xP-Ch. -5,3A/-20V SO8 IRF 7314 TRPBF
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.3A; On Resistance Rds(On):0.049Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -5.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 58 / Gate-Source Voltage V = 12 / Fall Time ns = 49 / Rise Time ns = 40 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 22 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.3 A
Current Rating-5.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time49 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance780 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-700 mV
Number of Channels2
Number of Elements2
On-State Resistance58 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max58 mΩ
Resistance58 mΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-700 mV
Turn-Off Delay Time42 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm