공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-12-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.ZXMHC3A01N8TC
MOSFET 2N/2P-CH 30V 8-SOIC / Trans MOSFET N/P-CH 30V 2.17A/1.64A 8-Pin SO T/R
설명
유통업체에서 제공한 Infineon IRF9952TRPBF에 대한 설명입니다.
MOSFET N/P-CH 30V 8-SOIC / Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC N T/R
Dual N/P-Channel 30 V 0.1/0.15 Ohm 6.9/6.1 nC HEXFET® Power Mosfet - SOIC-8
Infineon N/P-Channel HEXFET MOSFET, Vds=30V, 2.3A/3.5A, SOIC-8, SMD
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.5A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
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- INFINEON TECHNOLOGIE
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.5 A
Current Rating3.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vds)30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance190 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance150 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time20 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm