유통업체에서 제공한 Infineon IRF7205TRPBF에 대한 설명입니다.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.07Ohm;ID -4.6A;SO-8;PD 2.5W;VGS +/-20V
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
Single P-Channel 30V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
2.5W(Tc) 20V 3V@ 250¦ÌA 40nC@ 10 V 1P 30V 70m¦¸@ 4.6A,10V 4.6A 870pF@10V SOIC-8 1.75mm
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Tran; P CHANNEL MOSFET, -30V, 4.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-3V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.6 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 20 / Fall Time ns = 71 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 97 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5