공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-18
Lifecycle StatusObsolete (Last Updated: 7 months ago)
관련 부품
InfineonIRF7316TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.042Ohm;ID -4.9A;SO-8;PD 2W;VGS +/-20
설명
유통업체에서 제공한 Infineon IRF7205PBF에 대한 설명입니다.
Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.07Ohm;ID -4.6A;SO-8;PD 2.5W;VGS +/-20V
Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 4.6A 8-Pin SOIC Tube
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
P Channel Mosfet, -30V, 4.6A, Soic; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IRF7205PBF
MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:15A; SMD Marking:F7205; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
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- Infineon Technologies
- INF
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- INFIN
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- INFI
- INFENION
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- INFIENON
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.6 A
Current Rating-5.3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time71 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
On-State Resistance70 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max70 mΩ
Recovery Time100 ns
Resistance70 mΩ
Rise Time21 ns
Threshold Voltage-3 V
Turn-Off Delay Time97 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책