공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-04
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
관련 부품
VishaySI4532CDY-T1-GE3
SI4532CDY-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR,4.3 A,6 A,30V,8-PIN SOIC
InfineonIRF7406PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF9335TRPBF에 대한 설명입니다.
Single P-Channel 30 V 59 mOhm 9.1 nC HEXFET® Power Mosfet - SOIC-8
Power MOSFET, P Channel, 30 V, 5.4 A, 0.048 ohm, SOIC, Surface Mount
Trans MOSFET P-CH 30V 5.4A 8-Pin SOIC N T/R
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
P Channel, MOSFET, -30V, -5.4A, SOIC; Tr; P Channel, MOSFET, -30V, -5.4A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):48mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.4 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance59 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance386 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
On-State Resistance59 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max59 mΩ
Resistance59 MΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time16 ns
Turn-On Delay Time9.7 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm