가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRF6775MTRPBF | 4 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF6775MTRPBF | 9,342 | 1 | |||||||||
| Rochester Electronics | IRF6775MTRPBF | 59,308 | 12h | |||||||||
| RS (Formerly Allied Electronics) | IRF6775MTRPBF | 0 | 4800 | Bulk | 5h | |||||||
| Future Electronics | IRF6775MTRPBF | 0 | 4800 | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-17
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2026-05-31
LTD Date2026-11-30
관련 부품
InfineonIRFS5615TRLPBF
Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFR4615TRLPBF
N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti
설명
유통업체에서 제공한 Infineon IRF6775MTRPBF에 대한 설명입니다.
Single N-Channel 150 V 47 mOhm 25 nC HEXFET® Power Mosfet - DirectFET®
Power MOSFET, N Channel, 150 V, 28 A, 0.056 ohm, DirectFET MZ, Surface Mount
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 28 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:4.9A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.047ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
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- INFINEO
- INFINE
- INFIN
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- INFI
- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)4.9 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance56 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.411 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage150 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance56 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max56 mΩ
Rise Time7.8 ns
Schedule B8541290080
Turn-Off Delay Time5.8 ns
Turn-On Delay Time5.9 ns
Dimensions
Height780 µm
Length6.35 mm
Width5.0546 mm