공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-24
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
관련 부품
InfineonIRF1018ESPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;D2Pak;PD 110W;VGS +/-20
InfineonIRFR1018EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS +/-20
설명
유통업체에서 제공한 Infineon IRF6674TRPBF에 대한 설명입니다.
Single N-Channel 60 V 11 mOhm 36 nC HEXFET® Power Mosfet - DirectFET®
Benchmark MOSFETs Product Selection Guide | MOSFET N-CH 60V 13.4A DIRECTFET
MOSFET, 60V, 67A, 11.2 MOHM, 25 NC QG, MED CAN | Infineon IRF6674TRPBF
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N-CH, 60V, 67A, DIRECTFET MZ; Transistor Polarity: N Channel; Continuous Drain Current Id: 67A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFI
- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)13.4 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time8.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage60 V
Min Operating Temperature-40 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance11 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max11 mΩ
Rise Time12 ns
Threshold Voltage4 V
Turn-Off Delay Time12 ns
Turn-On Delay Time7 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm