가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF6644TRPBF | 28,800 | 4800 | 21h | ||||||||
| Future Electronics | IRF6644TRPBF | 48,000 | 4800 | Tape & Reel | ||||||||
| Rochester Electronics | IRF6644TRPBF | 595,531 | 18h | |||||||||
| DigiKey | IRF6644TRPBFCT-ND | 5,295 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF6644TRPBF | 9,538 | 1 |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-08-18
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
InfineonIRFR3410TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
STMicroelectronicsSTB75NF75LT4
N-Channel 75V - 0.009Ohm - 75A - D2PAK StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 Infineon IRF6644TRPBF에 대한 설명입니다.
Single N-Channel 100 V 13 mOhm 47 nC HEXFET® Power Mosfet - DirectFET®
Power MOSFET, N Channel, 100 V, 60 A, 0.0103 ohm, DirectFET MN, Surface Mount
Transistor MOSFET N-CH 100V 60A 7-Pin DirectFET MN T/R
Avnet Japan
IR MOSFET Power Field-Effect Transistor, 10A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N MOSFET, 100V, 8.3A, DIRECTFET MN; Tran; N MOSFET, 100V, 8.3A, DIRECTFET MN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.8V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Current Rating10.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.21 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage100 V
Min Operating Temperature-40 °C
Nominal Vgs4.8 V
Number of Channels1
Number of Elements1
On-State Resistance13 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max13 mΩ
Rise Time26 ns
Schedule B8541290080
Threshold Voltage4.8 V
Turn-Off Delay Time15 ns
Turn-On Delay Time9.5 ns
Voltage Rating (DC)100 V
Dimensions
Height700 µm
Length6.35 mm
Width5.0546 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책