공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-22
Lifecycle StatusObsolete (Last Updated: 8 months ago)
관련 부품
InfineonIRFS4615TRLPBF
MOSFET N-CH 150V 33A D2PAK N-Channel 150 V 33A (Tc) 144W (Tc) Surface Mount D2PAK
InfineonIRFS5615TRLPBF
Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRF3415SPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;D2Pak;PD 200W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF6218STRLPBF에 대한 설명입니다.
Single P-Channel 150 V 150 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
MOSFET P-CH 150V 27A D2PAK P-Channel 150 V 27A (Tc) 250W (Tc) Surface Mount D2PAK
-150V Single P-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
250W(Tc) 20V 5V@ 250¦ÌA 110nC@ 10 V 1P 150V 150m¦¸@ 16A,10V 27A 2.21nF@25V D2PAK 5.08mm
Trans MOSFET P-CH 150V 27A 3-Pin(2+Tab) D2PAK
HEXFET POWER SMPS MOSFET Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Mosfet, -150V, -150A, D2-Pak; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:27A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:- Rohs Compliant: Yes |Infineon Technologies IRF6218STRLPBF
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.21 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs-5 V
Number of Channels1
Number of Elements1
On-State Resistance150 mΩ
Package Quantity800
Power Dissipation250 W
Rds On Max150 mΩ
Rise Time70 ns
Schedule B8541290080
Threshold Voltage-5 V
Turn-Off Delay Time35 ns
Turn-On Delay Time21 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책