유통업체에서 제공한 Infineon IRF5806TRPBF에 대한 설명입니다.
IRF5806TRPBF P-channel MOSFET Transistor, 4 A, 20 V, 6-Pin TSOP
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
Single P-Channel 20 V 147 mOhm 11.4 nC HEXFET® Power Mosfet - TSOP-6
Power Field-Effect Transistor, 4A I(D), 20V, 0.086ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; P-Channel MOSFET | Target Applications: DC Switches; Load Switch
MOSFET, P, 20V, TSOP-6; Transistor Polarity: P Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0471ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: -1.2V; Power Dis
MOSFET, N, 20V, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:4A; Resistance, Rds On:0.086ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-1.2V; Case Style:TSOP; ;RoHS Compliant: Yes